● | 技術名稱 Technology | |||||||||
● | 發明人 Inventor |
龐敏熙, 吳文景, | ||||||||
● | 所有權人 Asignee | 國立臺灣科技大學 | ||||||||
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點閱數:292 |
技術摘要: | ||||||||||||||||||||||||||||||||
It is an objective of the invention to provide a gate driving device, which generates regulated gate voltage for SiC devices by active feedback. It is an objective of the invention to provide a gate driving device, which uses a single power source, rather than two, to provide positive and negative gate drive voltages. It is an objective 5 of the invention to provide a gate driving device, which uses unregulated power source as the single power source. It is an objective of the invention to provide a gate driving device, which eliminates interconnection inductance and resistance effect by sense probing at the device gate terminal. |
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