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技術名稱 Technology
發明人 Inventor
謝仁偉, 林翰毅,
所有權人 Asignee 國立臺灣科技大學

專利國家
Country
申請號
Application No.
專利號
Patent No.
中心案號
Serial No.
年費有效日期
美國 申請中 1030087US0 1900/01/01
中華民國 104100264 I557559 1030087TW0 2022/11/10
  點閱數:1775

技術摘要:
In recent years, flash memory has been widely used in embedded systems, portable devices, and high-performance storage products due to its non-volatility, shock resistance, low power consumption, and high performance natures. To reduce the product cost, multi-level-cell flash memory (MLC) has been proposed; compared with the traditional single-level-cell flash memory (SLC) that only stores one bit of data per cell, each MLC cell can store two or more bits of data. Thus MLC can achieve a larger capacity and reduce the cost per unit. However, MLC also suffers from the degradation in both performance and reliability. In this paper, we try to enhance the reliability and reduce the product cost of flash-memory based storage devices from a totally different perspective. We propose a half-level-cell (HLC) management scheme to manage and reuse the worn-out space in solid-state drives (SSDs); through our management scheme, the system can treat two corrupted pages as a normal page without sacrificing performance and reliability. To the best of our knowledge, this is the first research that reclaims free space by reviving the corrupted pages. The experiment results show that the lifetime of SSD can be extended by 48.54% for the trace of general users applications with our proposed HLC management scheme.

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