國立台灣科技大學-專利商品網-研發人才-柯文政

材料科學與工程系(所)

學經歷：

學歷：
國立交通大學電子物理系理學博士

經歷：
2006/9-2008/8 晶元光電股份有限公司資深工程師
2008/8-2013/1 元智大學機械系助理教授
2013/2-2015/1 元智大學機械系副教授
2015/2-2018/7 國立台灣科技大學材料科學與工程學系副教授
2018/8-迄今國立台灣科技大學材料科學與工程學系教授
2006/9-2008/8 Epistar Company. Senior Engineer
2008/8-2013/1 Assistant Professor, Dept. of Mechanical, Yuan Ze University
2013/2-2015/1 Associate Professor, Dept. of Mechanical, Yuan Ze University
2015/2-2018/7 Associate Professor, Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology
2018/8-present Professor, Dept. of Materials Science and Engineering, National Taiwan University of Science and Technology

專業技術

薄膜材料製程、半導體元件材料與物理、微奈米結構製程、二維材料製程與元件、固態照明、太陽能電池、氮化鎵材料與元件

研究成果與計畫

教授課程：工程數學、微機電製程與元件應用、工業電子學、計算機程式與應用

榮譽：

- 科技部106年度大專學生研究計畫研究創作獎-(宋若濃)「開發高穿透率與高導電率之網狀石墨烯透明導電電極」(106-2813-C-011-008-E)
- 2019晶元光電晶鷹盃科技競賽(江智詠涂益儒陳婕誼)，榮獲創意實作組-發光獎
- 2020功率半導體材料（氮化鎵＆碳化矽）應用元件國際論壇學生論文海報競賽(張妤敬鍾官諭鄭維昕)，榮獲特優獎
- 2021功率半導體材料（氮化鎵＆碳化矽）應用元件國際論壇學生論文海報競賽(鍾官諭鄭維昕)，榮獲特別獎

1. Wen-Cheng Ke*, Solomun Teklahymanot Tesfay, Tae-Yeon Seong, Zhong-Yi Liang, Chih-Yung Chiang, Chieh-Yi Chen, Widi Son, Kuo-Jen Chang and Jia-Ching Lin (2019, Dec.). Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer, ACS Appl. Mater. Interfaces, 11, 48086-48094. (SCI, IF=8.456, 27/293, Material Science, Multidisciplinary). MOST108-2221-E-011-090.本人為第一&通訊作者.

2. Wen-Cheng Ke, Zhong-Yi Liang, Solomun Teklahymanot Tesfay, Chih-Yung Chiang, Cheng-Yi Yang, Kuo-Jen Chang, Jia-Ching Lin (2019, Nov.). Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer, Applied Surface Science, 456, 967-972. (SCI, IF=5.155, 23/148, PHYSICS APPLIED).本人為第一&通訊作者

3. Wen-Cheng Ke*, Chih-Yung Chiang, Widi Son, Fang-Wei Lee (2018, Oct.). InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate, Applied Surface Science, 456, 967-972. (SCI, IF=5.155, 23/148, PHYSICS APPLIED). 本人為第一&通訊作者

4. Wen-Cheng Ke*, Fang-Wei Lee, Chih-Yung Chiang, Zhong-Yi Liang, Wei-Kuo Chen,and Tae-Yeon Seong (2016, Dec). InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate. ACS Appl. Mater. Interfaces , 8, 34520-34529. (SCI, IF=8.456, 27/293, Material Science, Multidisciplinary). MOST 104-2221-E-011-174. 本人為第一 &通訊作者.

5. Fang-Wei Lee, Wen-Cheng Ke*, Chun-Hong Cheng, Bo-Wei Liao, Wei-Kuo Chen (2016, Jul). Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates. Applied Surface Science, 375, P223. (SCI, IF=5.155, 23/148, PHYSICS APPLIED). MOST 104-2221-E-011-174. 本人為通訊作者.

6. Wen-Cheng Ke*, Zhong-Yi Liang, Cheng-Yi Yang, Yu-Teng Chan and Chi-Yung Jiang (2016, Feb). Improved conversion efficiency of InN/p-GaN heterostructure solar cells with embedded InON quantum dots. Applied Physics Letters, 108(6), 061603. (SCI, IF=3.521, 31/148, PHYSICS, APPLIED ). MOST 104-2221-E-011-174. 本人為第一&通訊作者.

7. Wen-Cheng Ke*, Fang-Wei Lee, Cheng-Yi Yang, Wei-Kuo Chen, and Hao-Ping Huang (2015, Nov). Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN. Journal of Applied Physics, 118, 155303. (SCI, IF=2.176, 58/146, PHYSICS, APPLIED). MOST 103-2221-E-011-178. 本人為第一&通訊作者.

※Patent

1. 柯文政、陳衛國、洪福益、何嘉哲，” 圖案化光電基板及其製作方法”，(I543395) (2016/07/21)。

2. Wen-Cheng Ke, Wei-Kuo Chen, Fwu-Yih Hong, Chia-Che Ho, “Patterned Opto-electrical Substrate and Method for Manufacturing the same”, United States Patent (9385274) (2016/7/5).

3. 柯文政、陳衛國、洪福益、何嘉哲，” 圖案化光電基板及其製作方法”, 中華人民共和國 (ZL 2013 1 0638546.5) (證書號:2631185) (2017/9/19)。

4. 柯文政、江智詠、何嘉哲、洪福益，”具有提升發光效率之圖案化光電基板、發光二極體及其製作方法” (I671260) (2019/9/11)

5. 柯文政、江智詠、?益儒，”凹槽型圖案化基板結構、具高散熱能力的半導體元件、及利用該凹槽型圖案化基板結構製作該具高散熱能力的半導體元件之方法” (I677108) (2019/11/11) 6. 柯文政、?益儒、何嘉哲、洪福益，”具有強化電性功能之圖案化光電基板及其製作方法” (I679774) (2019/12/11)