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莊敏宏

個人網站
電子工程系(所)
 
學經歷：
  學歷:
國立交通大學電子研究所博士

經歷:
1996.08 ~ 2001.01 副教授
1994.06 ~ 1996.07 台灣茂矽電子技術開發處

 
專業技術
  平面顯示器技術、積體電路元件及技術、奈米元件及技術、太陽電池、功率元件
   
研究成果與計畫
 

.


教授課程

物理、半導體元件製程、固態電子學、記憶體技術、高等電磁學

期刊論文

  • 57. M. H. Juang, J. Yu, C. C. Hwang, D. C. Shye, J. L. Wang, “Trench MOS barrier Schottky rectifier formed by counter-doping trench bottom implantation”, Microelectronics Reliability, in press, 2010.
  • 56. M. H. Juang, Y. S. Peng, D. C. Shye, J. L. Wang, C. C. Hwang, and S. L. Jang, “Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer”, Microelectronics Engineering, in press, 2010.
  • 55. M. H. Juang, Y. S. Peng, J. L. Wang, D. C. Shye, C. C. Hwang, and S. L. Jang, “Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure”, Solid State Electronics, vol. 54, in press, 2010.
  • 54. M. H. Juang, Y. S. Peng, J. L. Wang, D. C. Shye, C. C. Hwang, and S. L. Jang, “Microcrystalline-Si thin film transistors formed by using palladium silicided source/drain contact electrode”, Solid State Electronics, vol. 54, in press, 2010.
  • 53. M. H. Juang, C. N. Lu, S. L. Jang, and H. C. Cheng, “Study of ultra-shallow p+n junctions formed by excimer laser annealing”, Material Chemistry and Physics, vol. 123, pp. 280-263, 2010.
  • 52. M. H. Juang, C. W. Chang, D. C. Shye, C. C. Hwang, J. L. Wang, and S. L. Jang, “A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors”, Journal of Semiconductors, vol. 31, 064003, 2010.
  • 51. M. H. Juang, C. W. Chang, D. C. Shye, J. L. Wang, C. C. Hwang, and S. L. Jang, “Study of polycrystalline-Si thin film transistors with different channel layer thickness at low bias voltage”, Microelectronics Engineering, vol. 87, pp. 1896-1900, 2010.
  • 50. S. L. Jang, C. C. Shih, C. C. Liu, and M. H. Juang, “A 0.18 um CMOS Quadrature VCO using the quadruple push-push technique”, IEEE Microwave and Wireless Component Lett., vol. 20, pp. 343-345, 2010.
  • 49. M. H. Juang, C. C. Hwang, D. C. Shye, J. L. Wang, and S. L. Jang, “Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer”, Solid State Electronics, vol. 54, pp. 724-727, 2010.
  • 48. S. L. Jang, C. C. Liu, Y. J. Song, and M. H. Juang, ”A low voltage balanced clapp VCO in 0.13 micromolar CMOS technology”, Microwave and Optical Technology Lett., vol. 52, pp. 1623-1625, 2010.
  • 47. S. L. Jang, J. J. Chen, C. C. Liu, and M. H. Juang, ” Injection-Locked frequency tripler with series-tuned resonator in 0.13μm CMOS technology”, Microwave and Optical Technology Lett., vol. 52, pp. 1107-1110, 2010.
  • 46. M. H. Juang, P. S. Hu, and S. L. Jang, “Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure”, Thin Solid Films, vol. 518, pp. 3978-3981, 2010.
  • 45. M. H. Juang, C. W. Chang, J. L. Wang, D. C. Shye, C. C. Hwang, and S. L. Jang, “Formation of n-channel polycrystalline-Si thin film transistors by dual source/drain implantation”, Solid State Electronics, vol. 54, pp. 516-519, 2010.
  • 44. M. H. Juang, C. W. Chang, D. C. Shye, J. L. Wang, C. C. Hwang, and S. L. Jang, “Formation of sub-micrometer polycrystalline-SiGe thin film transistors by using a thinned channel layer”, Solid State Electronics, vol. 54, pp. 303-306, 2010.
  • 43. M. H. Juang, C. W. Huang,, M. L. Wu, D. C. Shye, J. L. Wang, C. C. Hwang, and S. L. Jang, “Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation”, Microelectronics Engineering, vol. 87, pp. 620-623, 2010.
  • 42. C. C. Liu, S. L. Jang, J. J. Chen, and M. H. Juang, “A 0.6-V low-power Armstrong VCO in 0.18 ?m CMOS”, Microwave and Optical technology Lett., vol. 52, pp. 116-119, 2010.
  • 41. S. L. Jang, C. W. Lin, C. C. Liu, and M. H. Juang, “Tail-injected divide-by-4 qadrature injection locked frequency divider”, Inter. J. Electronics, vol. 96, pp. 1225-1235, 2009.
  • 40. S. L. Jang, J. Y. Wun, C. C. Liu, and M. H. Juang, “A low power LC-tank SiGe BiCMOS injection locked frequency divider”, Microwave and Optical technology Lett., vol. 51, pp. 1970-1973, 2009.
  • 39. S. L. Jang, C. C. Lin, S. H. Huang, and M. H. Juang, “Quadrature cross-coupled VCO implemented with body injection-locked frequency divider”, Microwave and Optical technology Lett., vol. 51, pp. 1918-1921, 2009.
  • 38. M. H. Juang, C. W. Huang, C. W. Chang, D. C. Shye, J. L. Wang, C. C. Hwang, and S. L. Jang, “The formation of polycrystalline-Si thin-film-transistors by using large-angle- tilt implantation of dopant through gate sidewall spacer ”, Solid State Electronics, vol. 53, pp. 1036-1040, 2009.
  • 37. S. L. Jang, C. H. Yang, C. C. Liu, and M. H. Juang, “A wide-locking range 6-phase divide-by-3 injection-locked frequency divider”, Inter. J. Electronics, vol. 96, pp. 691-697, 2009.
  • 36. S. L. Jang, K. C. Shen, C. W. Chang, and M. H. Juang, “A six-phase divide-by-3 injection-locked frequency divider in SiGe BiCMOS technology”, Microwave and Optical technology Lett., vol. 51, pp. 1555-1557, 2009.
  • 35. S. L. Jang, R. K. Yang, C. W. Chang, and M. H. Juang, “ Multi-modulus LC injection-locked frequency dividers using single-ended injection”, IEEE Microwave and Wireless Component Lett., vol. 19, pp. 311-313, 2009.
  • 34. S. L. Jang, C. W. Chang, W. C. Cheng, and M. H. Juang, “Low-power divide-by-3 injection-locked frequency dividers implemented with injection transformer”, Electronic Lett., vol. 45, pp. 240-241, 2009.
  • 33. S. L. Jang, C. C. Liu, C. Y. Wu, and M. H. Juang, “A 5.6 GHz power balanced VCO in 0.18 ?m CMOS”, IEEE Microwave and Wireless Component Lett., vol. 19, pp. 233-235, 2009.
  • 32. S. L. Jang, S. S. Huang, C. F. Lee, and M. H. Juang, “CMOS Colpitts quadrature VCO using the body injection-locked coupling technique”, IEEE Microwave and Wireless Component Lett., vol. 19, pp. 230-232, 2009.
  • 31. M. H. Juang, S. H. Cheng, and S. L. Jang, “Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile”, Solid State Electronics, vol. 53, pp.371-375, 2009.
  • 30. M. H. Juang P. S. Hu, and S. L. Jang, “Formation of lateral SiGe tunneling field-effect transistors on the SiGe/oxide/Si-substrate”, Semi. Sci. Technol., vol. 24, 025019(4pp), 2009.
  • 29. S. L. Jang, C. W. Lin, C. C. Liu, and M. H. Juang, “An active-inductor injection locked frequency divider with variable division ratio”, IEEE Microwave and Wireless Component Lett., vol. 19, pp. 39-41, 2009.
  • 28. S. L. Jang, S. S. Huang, C. F. Lee, and M. H. Juang, “ CMOS Quadrature VCO implemented with two first-harmonic injection-locked oscillators”, IEEE Microwave and Wireless Component Lett., vol. 18, pp. 695-697, 2008.
  • 27. M. H. Juang, I. S. Tsai, and S. L. Jang, “The formation of polycrystalline-Si thin-film transistors with a thinned channel layer”, Semi. Sci. Technol., vol. 23, 105003(4pp), 2008.
  • 26. S. L. Jang, S. H. Huang, C. F. Lee, and M. H. Juang, “ LC-tank Colpitts injection-locked frequency divider with record locking range”, IEEE Microwave and Wireless Component Lett., vol. 18, pp. 560-562, 2008.
  • 25. S. L. Jang, S. C. Wu, C. F. Lee, and M. H. Juang, “CMOS top-series coupling quadrature injection-locked frequency divider”, Microwave and Optical technology Lett., vol. 50, pp. 2554-2557, 2008.
  • 24. S. L. Jang, P. X. Lu, C. F. Lee, and M. H. Juang, “Divide-by-3 LC injection locked frequency divider with a transformer as an injector’s load”, Microwave and Optical technology Lett., vol. 50, pp. 2722-2725, 2008.
  • 23. M. H. Juang, I. S. Tsai, S. L. Jang, and H. C. Cheng, “Formation of thin-film transistors with a polycrystalline hetero-structure channel layer”, Semi. Sci. Technol., vol. 23, 085017(4pp), 2008.
  • 22. S. L. Jang, S. S. Huang, S. C. Wu, C. F. Lee, and M. H. Juang, “A low power X-band CMOS differential VCO”, Microwave and Optical technology Lett., vol. 50, pp. 1389-1391, 2008.
  • 21. S. L. Jang, F. H. Chen, C. F. Lee, and M. H. Juang, “An LC-tank injection locked frequency divider with record locking range percentage”, Microwave and Optical technology Lett., vol. 50, pp. 808-810, 2008.
  • 20. S. L. Jang, W. H. Yeh, C. F. Lee, and M. H. Juang, “A low power CMOS divide-by-3 LC-tank injection locked frequency divider”, Microwave and Optical technology Lett., vol. 50, pp. 259-263, 2008.
  • 19. M. H. Juang C. L. Chen, and S. L. Jang, “A study of shallow trench isolation by using a ploy-Si sidewall buffer layer”, Semi. Sci. Technol., vol. 23, 015002(4pp), 2008.
  • 18. C. F. Lee, S. L. Jang, and M. H. Juang, “ A wide locking range differential Colpitts injection locked frequency divider”, IEEE Microwave and Wireless Component Lett., vol. 17, pp. 790-792, 2007.
  • 17. S. L. Jang, C. Y. Lin, C. F. Lee, and M. H. Juang, “A complementary Hartley injection-locked frequency dividers”, Microwave and Optical technology Lett., vol. 49, pp. 2817-2820, 2007.
  • 16. S. H. Lee, S. L. Jang, C. F. Lee, and M. H. Juang, “Wide locking range divide-by-4 injection locked frequency dividers”, Microwave and Optical technology Lett., vol. 49, pp. 1533-1536, 2007.
  • 15. S. H. Lee, S. L. Jang, Y. H. Chuang, J. J. Chao, J. F. Lee, and M. H. Juang, “A low power injection locked LC-tank oscillator with current reused topology”, IEEE Microwave and Wireless Component Lett., vol. 17, pp. 220-221, 2007.
  • 14. Y. H. Chuang, S. H. Lee, S. L. Jang, and M. H. Juang, “A low-voltage quadrature CMOS VCO based on voltage-voltage feedback topology”, IEEE Microwave and Wireless Component Lett., vol. 16, pp. 696-698, 2006.
  • 13. Y. H. Chuang, S. H. Lee, S. L. Jang, J. J. Chao, and M. H. Juang, “A ring-oscillator-based wide locking range frequency divider”, IEEE Microwave and Wireless Component Lett., vol. 16, pp. 470-471, 2006.
  • 12. Y. H. Chuang, S. H. Lee, R. H. Yen, S. L. Jang, and M. H. Juang, “A wide locking range and low voltage CMOS direct injection-locked frequency divider”, IEEE Microwave and Wireless Component Lett., vol. 16, pp. 299-301, 2006.
  • 11. M. H. Juang W. C. Chueh, and S. L. Jang, “The formation of trench-gate power MOSFETs with a SiGe channel region”, Semi. Sci. Technol., vol. 21, pp. 709-802, 2006.
  • 10. M. H. Juang, T. Y. Lin, and S. L. Jang, “The formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films ”, Solid State Electronics, vol. 50, pp. 114-118, 2006.
  • 9. M. H. Juang and Y. M. Chiu, “Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of poly-Si thin-film-transistors”, Semi. Sci. Technol., vol. 21, pp. 291-294, 2006.
  • 8. M. H. Juang and Y. M. Chiu, “High-performance poly-Si thin-film-transistors formed by using large-angle-tilt implanted drain”, Semi. Sci. Technol., vol. 20, pp. 1223-1225, 2005.
  • 7. Heng-Fa Teng, S.-L. Jang , and M. H. Juang, " Modeling of Degradation Effects on the High Frequency Noise of Metal-Oxide-Semiconductor Field-Effect Transistors”, Japan Journal Applied Physics, vol. 44, pp. 38-43, 2005.
  • 6. M. H. Juang, W. T. Chen, C. I. Ou-Yang, and S. L. Jang, M. J. Lin, and H. C. Cheng, “Fabrication of trench-gate power MOSFETs by using a dual doped body region”, Solid State Electronics, vol. 48, pp. 1079-1085, 2004.
  • 5. H. F. Teng, S. L. Jang, and M. H. Juang, “A unified model for high-frequency current noise of MOSFETs”, Solid State Electronics, vol. 47, pp. 2043-2048, 2003.
  • 4. D. C. Shye, C. C. Hwang, M. J. Lai, C. C. Jaing, J. S. Chen, S. Huang, M. H. Juang, B. S. Chiou, and H. C. Cheng, “Effects of post-oxygen treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures”, Jpn. J. Appl. Phys., vol. 42, pp. 549-553, 2003.
  • 3. M. H. Juang, C. I. Ou-Yang, and S. L. Jang, “A design consideration of channel doping profile for sub-0.12 mm partially depleted SOI n-MOSFET’s”, Solid State Electronics, vol. 46, pp. 1117-1121, 2002.
  • 2. M. H. Juang, L. C. Sun, W. T. Chen, and C. I. Ou-Yang, “A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFET’s”, Solid State Electronics, vol. 45, pp. 169-172, 2001.
  • 1. C. C. Hwang, M. H. Juang, M. J. Lai, C. C. Jaing, J. S. Chen, S. Huang, and H. C Cheng, “Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron cosputter technique at low substrate temperatures”, Solid State Electronics, vol. 45, pp. 121-125, 2001.

會議論文

  • 11. Yun-Hsueh Chuang, Shao-Hua Lee, Chien-Feng Lee, Sheng-Lyang Jang , and Miin-Horng Juang., " A new CMOS VCO topology with capacitive degeneration and transformer feedback,” 2006 VLSI- DAT, Taiwan.
  • 10. Y.-H. Chuang, S.-L. Jang,, W.-C. Huang, S.-H. Lee, and M.-H. Juang, "A Wide-Band fully-integrated CMOS oscillator Tuned by voltage Controlled transformer,” 1st applied science and technology conference(ASTC)-photonics and communications, B02, 2004, Kaohsiung, Taiwan.
  • 9. C.I. Ou-Yang and M. H. Juang, “Optimal design of trench-type insulated gate bipolar transistors with a blocking voltage over 600 volts”, Inter. Electron Devices and Mater. Symp., Hsin-chu, Taiwan, 2004.
  • 8. M. H. Juang, W. T. Chen, C. I. Ou-Yang, S. L. Jang, and H. C. Cheng, “Fabrication of trench-gate power MOSFET’s by using a dual doped body region”, Electron Devices and Mater. Symp., Kee-Lung, Taiwan, 2003.
  • 7. M. H. Juang and C. L. Chen, “Improvement of shallow trench isolation technology by using a poly-Si buffer layer”, International Electron Devices and Mater. Symp., Taipei, Taiwan, 2002.
  • 6. M. H. Juang and C. N. Lu, “Effect of post low-temperature treatment on shallow p+n junction formed by excimer laser annealing”, International 9th symposium on Nano Device Technology, Hsinchu, Taiwan,, 2002.
  • 5. M. H. Juang, C. C. Hwang, and H. C. Cheng, “Effect of RTA on TiN Films as the barrier layer for Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature”, Proceeding of Mater. Res. Symp. Spring Meeting, San Francisco, U.S.A., 2000 (acceptation for publication in 2002).
  • 4. M. H. Juang and C. N. Lu, “Study of forming shallow p+n junctions using excimer laser annealing”, Electron Devices and Mater. Symp., , Taiwan, 2001.
  • 3. M. H. Juang, C. C. Hwang, and H. C. Cheng, “Effects of post oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures”, International Conference on Solid State and Integrated Circuit Technology, ShangHai, China, 2001.
  • 2. M. H. Juang, C. I. Ou-Yang, and C. T. Lin, “Improvement of thin palladium silicde films by incorporating phosphorus dopant”, Proceeding of Mater. Res. Symp. Fall Meeting, Boston, U.S.A., 2000 (acceptation for publication in 2001).
  • 1. M. H. Juang, C. C. Hwang, and H. C. Cheng, “Effect of RTA on TiN Films as the barrier layer for Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature”, Mater. Res. Symp., Spring Meeting, , San Francisco, U.S.A., 2001.

研究計畫

  • 應用於極低溫製程之微晶矽薄膜電晶體之設計及製作 99.08~100.07 國科會
  • 以矽為基材之太陽電池結構之研究 96.08~97.07 國科會

 
   

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