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研究概述
本實驗室近五年的研究計畫內容主要是針對化學氣相沈積法(chemical vapor deposition, CVD) 來生成薄膜時所牽涉到的程序現象,以化工的手法(approach)來探討解析。特別是將CVD 程序中複雜的質傳與反應現象化為工程上較易為掌握與操控的模型。近年來探討的材料系統由矽(Si)、鍺(Ge)多晶物質,複合材質(composites)到如高能隙半導體的碳化矽(SiC)、氮化鎵(GaN)、銦化鎵(InN)的磊晶薄膜,以及應用在一維奈米材料的合成及改質。本實驗室欲將既有累積得到的經驗與成果展現在近年來本國正蓬勃發展的半導體及光電產業上。以化工的角度來探討、改善、創新相關材料的製程。
榮譽獎項
曾獲2001 年度化工學會年度論文獎
化工技術雜誌2003 年度第十一屆金筆獎
榮獲2004 年度中國工程師學會最佳論文獎。
指導研究生吳常明研究共同獲得2001 年度化工學會年度論文獎
指導研究生許育仁合作技術報告共同獲得化工技術雜誌2003 年度第十一屆金筆獎
指導研究生鄭惟元研究共同獲得2004 年度中國工程師學會最佳論文獎
指導研究生林政明參加2006 年化工年會獲得海報佳作
近五年來指導過的研究生8 名獲得國防科技役選拔。
代表近作
- Hong, L. S. and Z. L. Liu, "Gas-to-Particle Conversion Mechanism in Chemical Vapor Deposition of Silicon Carbide by SiH4 and C2H2", Ind. Eng. Chem. Res. 37, 3602~ 3609 (1998). (NSC85-2214-E-011-007) [SCI]
- Hong, L. S. and H. T. Lai, "Pore Structure Modification of Alumina Support by SiC-Si3N4Nanoparticles Prepared by the Particle Precipitation Aided Chemical Vapor Deposition ", Ind. Eng. Chem. Res. 38, 950~957 (1999). (NSC87-2214-E-011-021) [SCI]
- L. L. Lee, L. C. Hong, L. S. Hong and D. S. Tsai, "Pore Structure Modification by Chemical Vapor Deposition in Inorganic Membrane-Numerical Analysis", J. CIChE, 30, 105~115 (1999). (NSC87-2214-E-011-020) [SCI]
- Hong, L. S. and H. T. Lai, "Pore Structure Modification of Porous Support by PPCVD: A Technique to Reduce Permeability Decrease", J. CIChE, 30, 189~197 (1999). (NSC86-2214-E-011-021) [SCI]
- Hong, L. S., Y. Shimogaki and H. Komiyama, "Macro/microcavity Method and Its Application in Modeling Chemical Vapor Deposition Reaction Systems", Thin Solid Films, 365, 176~188 (2000). [SCI]
- Hong, L. S. and C. M. Wu, "Composition Determining Path in Synthesis of Silicon Carbide Films from SiH2Cl2/C2H2/H2Chemical Vapor Deposition System", J. CIChE, 31, 79~88 (2000). (NSC-83-0402-E011-011) [SCI]
- Hong, L. S. and M. G. Jeng, "Film Growth Modeling of Metal Organic Chemical Vapor Deposition of Copper from Cu (hfac)(VTMOS) in the Presence of Hydrogen", Jpn. J. Appl. Phys, 39, 501~505 (2000). (NSC88-2214-E-011-013) [SCI]
- Hong, L. S. and M. G. Jeng, "Incubation Time for Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonate-Copper (I)-Vinyltrimethoxysilane", Applied Surf. Sci. 161, 149~154 (2000). (NSC88-2214-E-011-013) [SCI]
- Hong, L. S. and C. C. Wei, "Effect of oxygen pressure upobn composition variation during Chemical Vapor Deposition Growth of Lead Titanate Films from Tetraethyl Lead and Titanium Tetraisopropoxide", Mater. Lett. 46, 149~153 (2000). (NSC88-CPC-E-011-011) [SCI]
- Hong, L. S. and C. C. Wei, "Kinetic Study of the Metalorganic Chemical Vapor Deposition of PbTiO3 Films from Pb(C2H5)4/Ti(i-OC3H7)4/O2 Reaction System", Jpn. J. Appl. Phys. 39, 4964~4969 (2000). (NSC88-CPC-E-011-011) [SCI]
- X. Y. Pan, D. S. Tsai, and L. S. Hong, "Abnormal Growth of Lead Titanate Thin Film in Chemical Vapor Deposition of Pb(C2H5)4/Ti(i-OPri)4/O2", Materials Chemistry and Physics, 70, 223~230 (2001). [SCI]
- Y. J. Hsu, L. S. Hong, K. F. Huang, J. E. Tsai, "Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source" , Thin Solid Films, 419, 33~39 (2002). [SCI]
- W. Y. Cheng and L. S. Hong*, “Chemical Vapor Deposition of Pb(Zrx Ti 1-x )O 3 Films by Pb(C2H5)4, Ti(i-OC3H7)4, Zr(t- OC4H9)4and O2: Role of Lead Oxide Formation from Pb(C2H5)4and O2on Film Properties”, Thin Solid Films, 415,94~100 (2002). (NSC88-CPC-E-011-011) [SCI]
- Y. J. Hsu, L. S. Hong, and J. E. Tsai, Metalorganic vapor phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine" , J. Cryst. Growth, 252/1-3, 144~151 (2003). (NSC 90-2214-E-011-010) [SCI]
- Y. J. Hsu, L. S. Hong," Effects of Hydrogen on GaN Epitaxy from trimethylgallium and tertiarybutylhydrazine, J. Cryst. Growth, 266, 347 (2004). (NSC90-2214-E-011-010) [SCI]
- M. S. Hu, L. S. Hong, "Surface Carbonization of Si (111) by C2H2 and the Subsequent SiC (111) Epitaxial Growth from SiH4 and C2H2" , J. Cryst. Growth, 265, 382 (2004). (SCI)
- W.Y. Cheng, L. S. Hong, "Growth kinetics of chemical-vapor-deposited Pb(Zrx,Ti1-x)O3 films from a Pb(C2H5)4/ Zr(O-t-C4H9)4/ Ti(O-i-C3H7)4/O2 reaction system " J. CIChE, 35, (6): 603 (2004) (SCI)
- T. Yasuda, T. Tada, S. Yamasaki, S. Gwo, L. S. Hong, " Position-Specified Formation of Epitaxial Si Grains on Thermally Oxidized Si(001) Surfaces via Isolated Nanodots" , Chem. Mater., 16, 3518 (2004). (SCI)
- W.Y. Cheng, L. S. Hong, " Composition and crystal phase control of chemical-vapor-deposited Pb(Zrx,Ti1-x)O3 films on various oxide electrodes with reactants Pb(C2H5)4, Zr(O-t-C4H9) 4, Ti(O-i-C3H7) 4 and O2 " Jpn. J. Appl. Phys., 44, 1A, 328 (2005) (SCI)
- C. L. Sun, L. C. Chen, M. C. Su, L. S. Hong, O. Chyan, C. Y. Hsu, K. H. Chen, T. F. Chang, and L. Chang, "Ultrafine Platinum Nanoparticles Uniformly Dispersed on Arrayed CNx Nanotubes with High Electrochemical Activity" , Chem. Mater., 17, 3749 (2005). (SCI)
- W. Y. Cheng, L. S. Hong, J. C. Jiang, Y. Chi and C. C. Lin, "Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate)dicarbonyl ruthenium" , Thin Solid Films, 483, 31 (2005). (SCI)
- Y. J. Hsu, L. S. Hong, and J. C. Jiang, "Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth" , Thin Solid Films, 498, 100 (2006). (SCI)
- L. C. Chen, C. M. Chen, C. S. Liu, and L. S. Hong, "Zinc Oxide Doped Indium Oxide Ohmic Contacts to p-Type GaN" ,J. Electrochem. Soc. 153, G931 (2006). (SCI)
- M. S. Hu, H. L. Chen, C. H. Shen, L. S. Hong, B. R. Huang, K. S. Chen, and L. C. Chen, "Photosensitive gold-nanoparticle-embedded dielectric nanowires" , Nature Materials, 5, 102 (2006). (SCI)
- M. S. Hu, L. S. Hong,W. M.Wang, T. T Chen, C W. Chen, C. C. Chen, Y. F.Chen, K. H. Chen, L. C. Chen," Sharp Infrared Emission from Single-crystalline Indium Nitride Nanobelts Prepared using by Guided-Stream Thermal Chemical Vapor Deposition" , Advanced Functional Materials, 16, 537 (2006). (SCI)
- M. S. Hu, G. M. Hsu, K. H. Chen, C. Y. Yu, H. C. Hsu, L. C. Chen, J. S. Hwang, L. S. Hong, Y. F. Chen, " Infrared lasing in InN Nanobelts" , Appl. Phys. Letts., 90, 1 (2007). (SCI)
- C. S. Liu, L. S. Hong, M. S. Hu, "Surface carbonization of Si(100) by C2H2 and its effects on the subsequent SiC(100) epitaxial film growth" , Journal of Physics and Chemistry of Solids, doi: 10.1016/j.jpcs.2007.07.041 (2007) (SCI)
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