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陽極層離子源與陽極層離子源離子束濺鍍模組
 
zoomin      
 
技術名稱
Technology
陽極層離子源與陽極層離子源離子束濺鍍模組
發明人
Inventor
趙良君,
所有權人
Asignee
國立臺灣科技大學

專利國家
Country
申請號
Application No.
專利號
Patent No.
中心案號
Serial No.
中華民國 104117375 I579880 1040009TW0
美國 15/163,659 申請中 1040009US0
 
點閱數:366
技術摘要:
The present invention discloses an ion beam sputter apparatus that composes of a downstream traveling ion beam encompassing a target that is positioned at a downstream location that together they produce sputtered material traveling upstream. The ion beam is generated utilizing an anode, a cathode and an ion source housing. The anode is facing the target and is made of non-magnetic materials and the surface of the anode can be either flat, concave or angled. The cathode is made of magnetic materials and contains an upper electrode and a lower electrode. The distance from the edge of the lower cathode electrode to the center of symmetry is larger than the distance from the edge of the upper cathode electrode to the center of symmetry. Permanent magnetic dipoles with their polarities aligned are attached to the lower cathode electrode, or to upper cathode electrode, or to both cathode electrodes. The upper cathode electrode, the lower cathode electrode and a shielding form the ion source housing that enclosing the anode. The upper and lower cathode electrode forms the open end of the housing where ion beam emerges. As the anode is biased and working gas is released into the housing, ion beam is generated emitting from the open end of the housing and bombarding on the target that creates an upstream traveled sputtered material. The erosion of cathode by ions is minimized by applying appropriate voltages to the cathode electrodes.

     
 
     
 

 
   




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