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何清華

個人網站
應用科技研究所
 
學經歷:
  學歷:
國立台灣科技大學電子工程系博士
國立台灣工業技術學院工程技術研究所電子組碩士

經歷:
國立臺灣科技大學應用科技研究所教授 2011/8 至今
(Professor in The Graduate Institute of Appl. Sci. & Technol., NTUST)
國立臺灣科技大學工程技術研究所教授 2009/8 ~ 2011/7
(Professor in The Graduate Institute of Engineering, NTUST)
國立東華大學材料科學與工程學系主任、教授、副教授、助理教授 2002/8-2009/7
(Professor and Chairman in The Department of Materials Science and Engineering, National Dong Hwa University)
國立東華大學光電工程研究所代理所長、教授 2006/8-2009/7
(Professor and Director in The Institute of Optoelectronic Engineering, National Dong Hwa University)
國立東華大學研發處學術服務組組長 2003/8-2006/7
(Director of Academic Service in NDHU)
光武技術學院電子系副教授、講師 1991/8-2002/7
(Associate Professor and lecturer in Kuang Wu Institute of Technology)
教育部技專校院評鑑委員 2012
(Member of Evaluation Committee in Ministry of Eduation)
 
專業技術
  1.光電半導體材料及元件之特性研究
2.半導體光電量測技術暨電路設計實務
3.固態電子
4.硫屬能源半導體之單晶成長與特性研究
   
研究成果與計畫
 

教授課程

半導體量測 (Characterization of Semiconductors)
半導體光學性質(Optical Properties of Semiconductors)
半導體原理(General Aspect of Semiconductors)
光電材料與元件 (Optoelectronics Materials and Devices)
半導體材料 (Semiconductor Materials)
半導體光電量測與分析 (Measurement and Study of Semi


榮譽獎項

獲選美國光學協會資深會員(OSA Senior Member, Recognition by Optical Society of America in Nov. 2010)
國立台灣科技大學98學年度傑出研究及創作獎(2009 Prominent research award in NTUST)
國立東華大學95年度新進教師學術獎(2006 Academic award for new professor in NDHU)
2005-2009多次收錄於Who’s who in the World,Who’s who in Science and Engineering 及Who’s who in Asia。
國立東華大學理工學院96年教學優良教師獎(Excellent teaching award in Sci & Eng college of NDHU)
89年教育部微電腦應用設計競賽儀表類優等獎(Best award for instrumentation design and application of microcomputer)


期刊論文

1. Ching-Hwa Ho,* 2011, “Enhanced photoelectric-conversion yield in niobium-incorporated In2S3 with intermediate band”, J. Mater. Chem., accepted for publication. (SCI, IF: 4.795) --Acceptance letter attached.
2. Ching-Hwa Ho,* 2011, “Electronic structure and optical property of As2(Te1-xSx)3 and As2(Te1-xSex)3 crystals”, J. Alloy & Compounds, in press. (SCI, IF: 2.135)[NSC98-2221-E-011-151-MY3]
3. Ching-Hwa Ho,* 2011/3, “Temperature dependent crystal-field splitting and band-edge characteristic in Cu(AlxIn1-x)S2 (0≤x≤1) series solar energy materials”, J. Electrochem. Soc., Vol. 158, No. 5, pp. H554-H560. (SCI, IF: 2.241) [NSC97-2221-E-011-164-MY3]
4. Ching-Hwa Ho,* 2011/2, “Single crystal growth and characterization of copper aluminum indium disulphide chalcopyrites”, J. Crystal Growth, Vol. 317, pp. 52-59. (SCI, IF: 1.534)[NSC97-2221-E-011-164-MY3]
5. C. H. Ho,* S. F. Lo, P. C. Chi, C. C. Wu, Y. S. Huang, and K. K. Tiong, 2011/4, “Optical characterization of electronic structure of CuInS2 and CuAlS2 chalcopyrite crystals”, Solid State Phenom. Vol. 170, pp. 21-24. (2005 IF: 0.493) [NSC97-2221-E-011-164-MY3]
6. L. C. Tien,* C. H. Ho, X. T. Yao, and J. R. Cai, 2011/1, “Synthesis of β-Ga2O3 Nanowires as a Broadband Emitter”, Appl. Phys. A, Vol. 102, No. 1, pp. 105 to 108. (SCI, IF: 1.595)[NSC98-2221-E-011-151-MY3]
7. Dumcenco, D. O., Y. C. Su, Y. P. Wang, K. Y. Chen, Y. S. Huang,* C. H. Ho, and K. K. Tiong, 2011/2, “Polarization dependent Raman active modes study of the Mo1-xWxS2 mixed layer crystals”, Chin. J. Phys. Vol. 49, No.1, pp. 270-277. (SCI, IF: 0.515)
8. H. J. Gau, W. R. Hwang, C. C. Wu ,* Y. K. Kuo, and C. H. Ho, 2011/4, “Microstructures and thermoelectric properties of (Bi2Te3)1-x/(CdTe)x composites” , Solid State Phenom. Vol. 170, pp. 41-46. (2005 IF: 0.493)
9. L. C. Tien,* W. T. Chen, and C. H. Ho, 2011, “Enhanced Photocatalytic Activity in β-Ga2O3 Nanobelts”, J. Am. Ceram. Soc., in press. (SCI, IF: 1.944) [NSC98-2221-E-011-151-MY3].
10. D. O. Dumcenco,* Y. C. Su, Y. P. Wang, K. Y. Chen, Y. S. Huang, C. H. Ho, K. K. Tiong, 2011/4, “Piezoreflectance and Raman characterization of Mo1-xWxS2 layered mixed crystals”, Solid State Phenom. Vol. 170, pp. 55-59. (2005 IF: 0.493)
11. Ching-Hwa Ho,* Chiao-Yeh Tseng, and Li-Chia Tien, 2010/8, “Thermoreflectance characterization of β-Ga2O3 thin-film nanostrips”, Opt. Express, Vol. 18, pp. 16360-16369. (SCI, IF: 3.278) [NSC98-2221-E-011-151-MY3]
12. C. H. Ho,* Y. P. Wang, C. H. Chan, Y. S. Huang, C. H. Li, 2010/8, “Temperature-dependent photoconductivity in β-In2S3 single crystals”, J. Appl. Phys., Vol. 108, pp. 043518-1 to 043518-4. (SCI, IF: 2.072) [NSC97-2221-E-011-164-MY3]
13. Ching-Hwa Ho,* 2010/9, “Growth and characterization of near-band-edge transitions in β-In2S3 single crystals”, J. Crystal Growth, Vol. 312, pp. 2718-2723. (SCI, IF: 1.534) [NSC97-2221-E-011-164-MY3]
14. Ching-Hwa Ho,* 2010/2, “Thermoreflectance characterization of the band-edge excitonic transitions in CuAlS2 ultraviolet solar-cell material”, Appl. Phys. Lett., Vol. 96, pp. 061902-1 to 061902-3. (SCI, IF: 3.554) [NSC97-2221-E-011-164-MY3]
15. Ching-Hwa Ho,* and Guan-Tzu Huang, 2010/2, “Polarized-thermoreflectance study of the band-edge transitions in Cu(Al0.5In0.5)S2 solar-energy related crystal”, Opt. Express, Vol. 18, pp. 3820-3827. (SCI, IF: 3.278) [NSC98-2221-E-011-151-MY3]
16. Ching-Hwa Ho,* Sheng-Feng Lo, and Ping-Chen Chi, 2010/2, “Electronic structure and E1 excitons of CuInS2 energy-related crystals studied by temperature-dependent thermoreflectance spectroscopy”, J. Electrochem. Soc., Vol. 157, No. 2, pp. H219-H226. (SCI, IF: 2.241) [NSC97-2221-E-011-164-MY3]
17. Yi-Ping Wang, Ching-Hwa Ho,* and Ying-Sheng Huang, 2010/10, “The study of surface photoconductive response in indium sulfide crystals”, J. Phys. D: Appl. Phys., Vol. 43, No.
41, pp. 415301-1 to 415301-5. (SCI, IF: 2.083) [NSC97-2221-E-011-164-MY3]
18. L. C. Chao,* Y. R. Shih, Y. K. Li, J. W. Chen, J. D. Wu, and C. H. Ho, 2010/4, “Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition”, Appl. Surf. Sci., Vol. 256, pp. 4153-4156. (SCI, IF: 1.616)
19. Y. J. Chen,* Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, 2010/1, “Effect of temperature on lateral growth of ZnO grains grown by MOCVD”, Ceramics International, Vol. 36, pp. 69-73. (SCI, IF: 1.686)
20. Ching-Hwa Ho * and Jheng-Wei Lee, 2009/12, “Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy”, Opt. Lett., Vol. 34, pp. 3604-3606. (SCI, IF: 3.059) [NSC98-2221-E-011-151-MY3]
21. C. H. Ho,* J. S. Li, and Y. S. Lin, 2009/2, “Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures”, Semicond. Sci. Tech., Vol. 24, pp. 035013-1 to 035013-8. (SCI, IF: 1.253) [NSC95-2221-E-259-031-MY3]
22. C. H. Ho,* J. S. Li, Y. J. Chen, C. C. Wu, Y. S. Huang, and K. K. Tiong, 2009/7, “Optical anisotropy of near band-edge transitions in zinc oxide nanostructures”, J. Alloys & Compounds, Vol. 480, pp. 50-53. (SCI, IF: 2.135) [NSC95-2221-E-259-031-MY3]
23. C. H. Ho,* S. T. Wang, Y. S. Huang, and K. K. Tiong, 2009/1, “Structural and luminescent property of gallium chalcogenides GaSe1-xSx layer compounds”, J. Mat. Sci.: Mater Electron. Vol. 20, pp. 207-210. (SCI, IF: 1.020) [NSC95-2221-E-259-031-MY3]
24. K. C. Hsu, C. H. Ho,* and Y. S. Lin,* Y. H. Wu, R.T. Hsu, and K.W. Huang, 2009/3, “Optical and electrical characteristics of GaAs/InGaAs quantum-well device”, J. Alloys & Compounds, Vol. 471, pp. 567-569. (SCI, IF: 2.135)
25. Y. J. Chen,* C. H. Ho, H. Y. Lai and J. H. Du, 2009/6, “Mechanism of Well-Oriented Dense ZnO Film Formation by MOCVD”, JOM, Vol. 61, pp. 23-27. (SCI, IF: 1.043)
26. R. S. Devan, W. D. Ho, C. H. Chen, H. W. Shiu, Ching-Hwa Ho, C. L. Cheng, S. Y. Wu, Y. Liou, and Y. R. Ma,* 2009/10, “Intense room-temperature photoluminescence of one-dimensional Ta2O5 nanorod arrays”, Nanotechnology, Vol. 20, pp. 445708-1 to 445708-5. (SCI, IF: 3.137)
27. C. H. Liang, K. K. Tiong,* Y. S. Huang, D. Dumcenco, and C. H. Ho, 2009/1, “In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide”, J. Mat. Sci.: Mater Electron. Vol. 20, pp. 476-479. (SCI, IF: 1.020)
28. H. J. Gau, J. L. Yu, C. C. Wu*, Y. K. Kuo, and C. H. Ho, 2009/7, Thermoelectric properties
of In-incorporated Zn4Sb3 compounds”, J. Alloys & Compounds, Vol. 480, pp. 73-75. (SCI, IF: 2.135)
29. D. O. Dumcenco,* Y. M. Chen, Y. S. Huang, and C. H. Ho, 2009/7 “Optical properties of rheniumdiselenide single crystals doped with transition metals”, Moldavian Journal of The Physical Sciences, Vol.8, No. 3-4, pp.271-278.
30. C. H. Liang, Y. H. Chan, K. K. Tiong,* Y. S. Huang, Y. M. Chen, D. O. Dumcenco, C. H. Ho, 2009/7, “Optical anisotropy of Au-Doped ReS2 Crystals”, J. Alloys & Compounds, Vol. 480, pp. 94-96. (SCI, IF: 2.135)
31. C. H. Ho,* M. C. Tsai, and M. S. Wong, 2008/8, “Characterization of indirect and direct interband transitions of anatase TiO2 by thermoreflectance spectroscopy”, Appl. Phys. Lett., Vol. 93, pp. 081904-1 to 081904-3. (SCI, IF: 3.554) [NSC95-2221-E-259-031-MY3]
32. C. H. Ho,* Y. J. Chen, and J. S. Li, 2008/8, “Optical property of near band-edge transitions in well-aligned and tilted ZnO nanostructures”, J. Phys. D: Appl. Phys., Vol. 41, pp. 165410-1 to 165410-7. (SCI, IF: 2.083) [NSC95-2221-E-259-031-MY3]
33. C. H. Ho,* M. H. Hsieh, and Y. S. Huang, 2008/4, “Compensation and carrier conduction in synthetic Fe1-xNixS2 (0≤x≤0.1) single crystals” J. Electrochem. Soc., Vol. 155, No.4, pp. H254-H258. (SCI, IF: 2.241) [NSC95-2221-E-259-035-]
34. C. H. Ho* and S. T. Wang, 2007/8, “Band-edge properties of layered germanium dichalcogenides,” Phys. Rev. B, Vol. 76, pp. 073315-1 to 073315-4. (SCI, IF: 3.475) [NSC95-2221-E-259-035-]
35. C. H. Ho,* Y. J. Chen, H. W. Jhou, and J. H. Du, 2007/9, “Optical anisotropy of ZnO nanocrystals on sapphire by thermoreflectance spectroscopy,” Opt. Lett., Vol. 32, pp. 2765-2767. (SCI, IF: 3.059) [NSC95-2221-E-259-031-MY3]
36. C. H. Ho,* J. H. Li, and Y. S. Lin, 2007/10 “Optical characterization of a
GaAs/In0.5(AlxGa1-x)0.5P/GaAs heterostructure cavity by piezoreflectance spectroscopy” Opt. Express, Vol. 15, pp. 13886-13893. (SCI, IF: 3.278) [NSC95-2221-E-259-031-MY3]
37. C. H. Ho,* M. H. Hsieh, C. C. Wu, Y. S. Huang, and K. K. Tiong, 2007/9, “Dichroic optical and electrical properties of rhenium dichalcogenides layer compounds”, J. Alloys & Compounds, Vol. 442, pp. 245-248. (SCI, IF: 2.135) [NSC94-2215-E-259-008]
38. C. C. Wu,* C. H. Ho, M. H. Yu, W. J. Chou, 2007/1, “Characterization of As2(Se1-xSx)3 series glass system”, J. Alloys & Compounds, Vol. 427, pp. 305-309. (SCI, IF: 2.135) [NSC94-2215-E-259-008]
39. Y. S. Lin,* J. H. Huang, and C. H. Ho, 2007/4, “Improved InP-based double heterojunction bipolar transistors”, Physica Status Solidi (c), Vol. 4, No.5, pp. 1680-1684.
40. Y. S. Lin,* B. Y. Chen, and C. H. Ho, 2007/11, “Comprehensive characterization of AlGaAs/InGaAs/GaAs composite-channel high-electron mobility transistor”, J. Electrochem. Soc., Vol. 154, pp. H951-H956. (SCI, IF: 2.241)
41. C. H. Ho,* J. H. Li, and Y. S. Lin, 2006/11, “Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 expitaxy on InP”, Appl. Phys. Lett., Vol. 89, pp. 191906-1 to 191906-3. (SCI, IF: 3.554) [NSC95-2221-E-259-031-MY3]
42. C. H. Ho* and S. L. Lin, 2006/10, “Optical properties of the interband transitions of layered gallium sulfide”, J. Appl. Phys., Vol. 100, pp. 083508-1 to 083508-6. (SCI, IF: 2.072) [NSC94-2215-E-259-008]
43. C. H. Ho,* K. W. Huang, and Y. S. Lin, 2006/11, “Photoreflectance and Photoluminescence Study of InxGa1-xAs/GaAs Graded-Channel High Electron Mobility Transistors”, J. Electrochem. Soc., Vol. 153, pp. G966-G969. (SCI, IF: 2.241) [NSC94-2215-E-259-001]
44. C. H. Ho,* Y. H. Liang, and Y. J. Chen, 2006/10, “Band-edge Transitions of a Metalorganic Chemical Vapor Deposited ZnO Film on Si by Thermoreflectance Spectroscopy”, Electrochemical and Solid-State Letters, Vol. 9, pp. G312-G315. (SCI, IF: 1.837) [NSC94-2215-E-259-001]
45. C. H. Ho,* Y. J. Chen, Y. H. Liang, J. C. Yeh, and T. C. Tsai, 2006/3, “Characterization of gap states in an amorphous SiNx film grown on GaAs substrate using modulation spectroscopic techniques”, Electrochemical and Solid-State Letters, Vol. 9, pp. G181-G183. (SCI, IF: 1.837) [NSC94-2215-E-259-001].
46. C. H. Ho,* Y. S. Huang, and K. K. Tiong, 2006/9, “Characterization of near band-edge properties of synthetic p-FeS2 iron pyrite from electrical and photoconductivity measurements”, J. Alloys & Compounds, Vol. 422, pp. 321-327. (SCI, IF: 2.135) [NSC94-2215-E-259-008]
47. Ching-Hwa Ho,* Ming-Hung Hsieh, and Ching-Cherng Wu, 2006/11, “Photoconductance and Photoresponse of Layer Compound Photodetectors in UV-Visible Region”, Rev. Sci. Instrum., Vol. 77, pp. 113102-1 to 113102-4. (SCI, IF: 1.521) [NSC94-2215-E-259-001]
48. Y. S. Lin,* D. H. Huang, W. C. Hsu, T. B. Wang, K. H. Su, J. C. Huang, and C. H. Ho, 2006/4, “Improved InAlGaP-based heterostructure field-effect transistors”, Semicond. Sci. Tech., Vol. 21, pp. 540-543. (SCI, IF: 1.253)
49. C. H. Ho* and K. W. Huang, 2005/12, “Visible luminescence and structural property of GaSe1-xSx (0≤x≤1) series layered crystals”, Solid State Communications, Vol. 136, pp. 591-594. (SCI, IF: 1.837) [NSC94-2215-E-259-008].
50. C. H. Ho,* S. L. Lin and C. C. Wu, 2005/9, “Thermoreflectance study of the electronic structure of Ge(Se1-xSx)2”, Phys. Rev. B, Vol. 72, pp. 125313-1 to 125313-7. (SCI, IF: 3.475) [NSC93-2215-E-259-002].
51. C. C. Wu,* C. H. Ho, J. Y. Wu, S. L. Lin and Y. S. Huang, 2005/8, “Characterization of Ge(Se1-xSx)2 series layered crystals grown by vertical Bridgman method”, J. Crystal Growth, Vol. 281, pp. 377-383. (SCI, IF: 1.534) [NSC93-2215-E-259-002].
52. Ching-Hwa Ho,* Kuo-Wei Huang, Yu-Shyan Lin and Der-Yuh Lin, 2005/5, “Practical PL and PR spectroscopic system for optical characterization of semiconductor devices”, Opt. Express, Vol. 13, pp. 3951-3960. (SCI, IF: 3.278) [NSC93-2215-E-259-002]. [本論文所發表之量測技術於HORIBA Jobin Yvon公司2009.10 出版之Newsletter 中以頭條消息被報導]
53. Ching-Hwa Ho,* 2005/1, “Optical study of the structural change in ReS2 single crystals using polarized thermoreflectance spectroscopy”, Opt. Express, Vol. 13, pp. 8-19. (SCI, IF: 3.278)[NSC93-2215-E-259-002].
54. C. H. Ho,* C. C. Wu and Z. H. Cheng, 2005/6, “Crystal structure and electronic structure of GaSe1-xSx series layered solids”, J. Crystal Growth, Vol. 279, pp. 321-328. (SCI, IF: 1.534) [NSC93-2215-E-259-002].
55. Ching-Hwa Ho,* Horng-Wen Lee, and Zau-Hwang Cheng, 2004/4, “Practical Thermoreflectance Design For Optical Characterization of Layer Semiconductors”, Rev. Sci. Instrum., Vol. 75, pp. 1098-1102. (SCI, IF: 1.521) [NSC92-2215-E-259-002].
56. C. H. Ho,* C. E. Huang, C. C. Wu, 2004/10, “Preparation and characterization of Ni incorporated FeS2 single crystals”, J. Crystal Growth, Vol. 270, pp. 535-541. (SCI, IF: 1.534)[NSC92-2215-E-259-002].
57. C. H. Ho,* H. W. Lee, and C. C. Wu, 2004/8, “Polarization Sensitive Behavior of The Band-Edge Transitions In ReS2 and ReSe2 Layered Semiconductors”, J. Phys.: Condens. Matter, Vol. 16, pp. 5937-5944. (SCI, IF: 1.964) [NSC92-2215-E-259-002].
58. C. H. Ho* and C. E. Huang, 2004/11, “Optical Property of The Near Band-Edge Transitions in Rhenium Disulfide and Diselenide”, J. Alloys & Compounds, Vol. 383, pp. 74-79. (SCI, IF: 2.135) [NSC91-2215-E-259-004]
59. C. H. Ho,* and H. W. Lee, 2004/7, “High-Resolution and Easy-Implemented Spectral Measured System Used for Optical Characterization of Optoelectronic Materials and Devices”, Opt. Eng., Vol. 43, pp. 1628-1633. (SCI, IF: 0.553) [NSC91-2215-E-259-004]
60. C. C. Wu,* C. H. Ho, W. T. Shen, Z. H. Cheng, Y. S. Huang, and K. K. Tiong, 2004/12, “Optical properties of GaSe1-xSx series layered semiconductors grown by vertical Bridgman method”, Mat. Chem. Phys., Vol. 88, pp. 313-317. (SCI, IF: 2.015) [NSC91-2215-E-259-004].
61. S. Y. Hu, S. C. Lin, K. K. Tiong,* P. C. Yen, Y. S. Huang, C. H. Ho, and P. C. Liao, 2004/11, “Growth and Characterization of Tungsten- and Molybdenum- doped ReSe2 Single Crystals”, J. Alloys & Compounds, Vol. 383, pp. 63-68. (SCI, IF: 2.135) [NSC91-2215-E-259-004]
62. C. H. Hsieh, Y. S. Huang,* C. H. Ho, K. K. Tiong, M. Muñoz, O. Maksimov, and M. C. Tamargo, 2004/2, “Temperature Dependence of The Band-Edge Transitions of ZnCdBeSe”, Jpn. J. Appl. Phys., Vol. 43, pp. 459-466. (SCI, IF: 1.138) [NSC91-2215-E-259-004]
63. C. H. Ho,* P. C. Yen, Y. S. Huang and K. K. Tiong, 2002/12, “Photoreflectance Study of The Excitonic Transitions of Rhenium Disulphide Layer Compounds”, Phys. Rev. B, Vol. 66, pp. 245207-1 to 245207-5. (SCI, IF: 3.475) [NSC91-2215-E-259-004]
64. P. C. Yen, M. J. Chen, Y. S. Huang,* C. H. Ho, and K. K. Tiong, 2002/5, “Growth and Characterization of Molybdenum-doped ReS2 Single Crystals”, J. Phys.: Condens. Matter, Vol. 14, pp. 4737-4746. (SCI, IF: 1.964)
65. Ching Hwa Ho,* 2001/7, “A Practical and Inexpensive Design for Measuring The Radiation Patterns and Luminescent Spectra of Optoelectronic Devices”, Rev. Sci. Instrum. Vol. 72, pp. 3103-3107. (SCI, IF: 1.521) [NSC89-2626-E-149-003]
66. Ching-Hwa Ho,* Chang-Hsun Hsieh, Ying-Jui Chen, Ying-Sheng Huang, and Kwong-Kau Tiong, 2001/11, “Novel Electronic Design for Double Modulation Spectroscopy of Semiconductor and Semiconductor Microstructures”, Rev. Sci. Instrum. Vol. 72, pp. 4218-4222. (SCI, IF: 1.521) [NSC90-2215-E-149-002]
67. C. H. Ho,* P. C. Yen, Y. S. Huang, and K. K. Tiong, 2001/9, “Polarized Electrolyte Electroreflence Study of ReS2 and ReSe2 Layered Semiconductors”, J. Phys.: Condens. Matter, Vol. 13, pp. 8145-8152. (SCI, IF: 1.964) [NSC89-2112-M-019-006]
68. C. H. Ho,* Y. S. Huang and K. K. Tiong, 2001/4, “In-plane Anisotropy of the Optical and Electrical Properties of ReS2 and ReSe2 Layered Crystals”, J. Alloys & Compounds. Vol. 317-318, pp. 222-226. (SCI, IF: 2.135) [NSC89-2112-M-019-002]
69. K. K. Tiong,* Y. S. Huang and C. H. Ho, 2001/4, “Electrical and Optical Anisotropic Properties of Rhenium-doped Molybdenum Disulphide”, J. Alloys & Compounds Vol. 317-318, pp. 208-212. (SCI, IF: 2.135) [NSC89-2112-M-019-002]
70. K. K. Tiong,* T. S. Shou and C. H. Ho, 2000/4, “Temperature Dependence Piezoreflectance Study of the Effect of Doping MoS2 with Rhenium”, J. Phys.: Condens. Matter, Vol. 12, pp. 3441-3449. (SCI, IF: 1.964) [NSC89-2112-M-019-002]
71. W. C. Yeh, S. Chen, Y. S. Huang,* C. H. Ho and K. K. Tiong, 2000/3, “Temperature dependent polarized-piezoreflectance study of GaInP”, J. Phys.: Condens. Matter, Vol. 12, pp. 2183-2192. (SCI, IF: 1.964) [NSC89-2112-M-019-002]
72. C. H. Ho, Y. S. Huang,* J. L. Chen, T. E. Dann, and K. K. Tiong, 1999/12, “Electronic Structure of ReS2 and ReSe2 from First-principles Calculations, Photoelectron Spectroscopy, and Electrolyte Electroreflectance”, Phys. Rev. B, Vol. 60, pp. 15766-15771. (SCI, IF: 3.475)
73. C. H. Ho, Y. S. Huang,* P. C. Liao and K. K. Tiong, 1999/11, “Crystal Structure and Band-edge Transitions of ReS2-xSex Layered Compounds”, J. Phys. & Chem. of Solids, Vol.
60, pp. 1797-1804. (SCI, IF: 1.189) [成果被收錄於粉末X-ray 資料庫ICDD-PDF]
74. C. H. Ho, Y. S. Huang,* K. K. Tiong and P. C. Liao, 1999/7, “In-plane Anisotropy of The Optical and Electrical Properties of Layered ReS2 Crystals”, J. Phys.: Condens. Matter Vol. 11, pp. 5367-5375. (SCI, IF: 1.964)
75. K. K. Tiong,* P. C. Liao, C. H. Ho, Y. S. Huang, 1999/9, “Growth and Characterization of Rhenium-doped MoS2 Single Crystals”, J. Crystal Growth, Vol. 225, pp. 543-547. (SCI, IF: 1.534) [NSC89-2112-M-019-002]
76. K. K. Tiong,* C. H. Ho, Y. S. Huang, 1999/8, “The Electrical Transport Properties of ReS2 and ReSe2 Layered Crystals”, Solid State Communications, Vol. 111, pp. 635-640. (SCI, IF:1.557) [NSC89-2112-M-019-002]
77. C. H. Ho, Y. S. Huang,* and K. K. Tiong, 1998/12, “An Electrolyte Electroreflectance Study of ReS2”, Solid State Communications, Vol. 109, pp. 19-22. (SCI, IF: 1.837)
78. C. H. Ho, Y. S. Huang,* K. K. Tiong, and P. C. Liao, 1998/12, “Absorption-edge Anisotropy in ReS2 and ReSe2 Layered Semiconductors”, Phys. Rev. B, Vol. 58, pp. 16130-16135. (SCI, IF: 3.475) [成果被引用於專業書籍: D. Dragoman, “Optical Characterization of Solids”]
79. C. H. Ho, Y. S. Huang,* P. C. Liao, and K. K. Tiong, 1998/11, “Piezoreflectance Study of Band-edge Excitons of ReS2-xSex Single Crystals”, Phys. Rev. B, Vol. 58, pp. 12575-12578. (SCI, IF: 3.475) [成果被引用於專業書籍: D. Dragoman, “Optical Characterization of Solids”]
80. C. H. Ho, C. S. Wu, Y. S. Huang,* P. C. Liao, and K. K. Tiong, 1998/10, “Temperature Dependence of Energies and Broadening Parameters of The Band-edge Excitons of Mo1-xWxS2 Single Crystals”, J. Phys.: Condens. Matter, Vol. 10, pp. 9317-9328. (SCI, IF: 1.964)
81. Y. S. Huang,* C. H. Ho, P. C. Liao, and K. K. Tiong, 1997/11, “Temperature Dependent Study of The Band Edge Excitons of ReS2 and ReSe2”, J. Alloys & Compounds, Vol. 262-263, pp. 92-96. (SCI, IF: 2.135)
82. C. H. Ho, P. C. Liao, Y. S. Huang,* and K. K. Tiong, 1997/7, “Piezoreflectance Study of The Band-edge Excitons of ReS2”, Solid State Communications, Vol. 103, pp. 19-23. (SCI, IF: 1.837)
83. C. H. Ho, P. C. Liao, Y. S. Huang,* and K. K. Tiong, 1997/6, “Temperature Dependence of Energies and Broadening Parameters of The Band-edge Excitons of ReS2 and ReSe2”, Phys. Rev. B, Vol. 55, pp. 15608-15613. (SCI, IF: 3.475) [成果被引用於光學百科全書: “Encyclopedia of Modern Optics,”ElsevierPhysics, December Issue, 2004]]
84. C. H. Ho, P. C. Liao, Y. S. Huang,* T.R. Yang, and K. K. Tiong, 1997/5, “Optical Absorption of ReS2 and ReSe2 Single Crystals”, J. Appl. Phys., Vol. 81, pp. 6380- 6383. (SCI, IF: 2.072)
85. P. C. Liao, C. H. Ho, Y. S. Huang,* and K. K. Tiong, 1997/2, “Preparation and Characterization of Pyrite-like Single Crystal Phase in The Ir-Te System”, J. Crystal Growth, Vol. 171, pp. 586-590. (SCI, IF: 1.534)
86. Ching-Hwa Ho,* “Dichroic electro-optical behavior of rhenium sulfide layered material”, submitted to Opt. Mat. Express, 2011. (MS ID#: 141893) [NSC97-2221-E-011-164-MY3]
87. Ching-Hwa Ho,* “Practical and User-Friendly Design For A Personal Computer Auxiliary Instrument With Signal’s Sensing and Generation”, submitted to IEEE Tr. Consumer Elect., 2011. (Paper ID#: 8416) [NSC98-2221-E-011-151-MY3]
88. L. C. Tien,* W. T. Chen, C. C. Tseng and C. H. Ho, “Structural characterization and field emission properties of β-Ga2O3 nanobelts”, submitted to Mat. Chem. Phys., 2011. [NSC98-2221-E-011-151-MY3]


研討會論文

1. C. H. Ho, S. F. Lo, P. C. Chi, C. C. Wu, Y. S. Huang, and K. K. Tiong, “Optical characterization of electronic structure of CuInS2 and CuAlS2 chalcopyrite crystals”, 17thInternational Conference on Solid Compounds of Transition Elements SCTE 2010 September 5-10, Annecy, France. [計畫編號: NSC97-2221-E-011-164-MY3]
2. Y. P. Wang and C. H. Ho, “The study of surface photoconductive response in indium sulfide crystals”, 2010 International Electron Devices and Materials Symposium (IEDMS 2010) November 18-19, Chungli, Taiwan [計畫編號: NSC97-2221-E-011-164-MY3]
3. C. H. Chan, C. H. Ho, and G. T. Huang, “Polarized-thermoreflectance study of the band-edge transitions in Cu(Al0.5In0.5)S2 solar-energy related crystal”, OPT 2010, Dec. 3-4, Tainan, Taiwan. [計畫編號: NSC98-2221-E-011-151-MY3]
4. J. R. Cai, G. T. Huang, C. Y. Tseng, J. W. Lee, and C. H. Ho, “Characterization of band-edge and optoelectronic properties of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy”, OPT 2009, Taipei,
Taiwan. [計畫編號: NSC98-2221-E-011-151-MY3]
5. D. O. Dumcenco, Y. S. Huang, Y. P. Wang, C. H. Ho, and K. K. Tiong, “Piezoreflectance and Raman characterization of the Mo1-xWxS2 mixed layered crystals”, 17th International Conference on Solid Compounds of Transition Elements SCTE 2010 September 5-10, Annecy, France.
6. K. K. Tiong, C. H. Liang, S. K. Wang, L. J. Liu, Y. S. Huang, and C. H. Ho, “Optical and vibrational properties of niobium-doped molybdenum disulphide”, 17th International Conference on Solid Compounds of Transition Elements SCTE 2010 September 5-10, Annecy, France.
7. C. C. Wu, H. J. Gau, W. R. Hwang, Y. K. Kuo, and C. H. Ho, “Microstructures and thermoelectric properties of (Bi2Te3)1-x/(CdTe)x composites”, 17th International Conference on Solid Compounds of Transition Elements SCTE 2010 September 5-10, Annecy, France.
8. Dumitru Dumcenco, Ying-Sheng Huang, Ching-Hwa Ho, Andrei Colev, Cornel Gherman , Leonid Kulyuk , Kwong-Kaw Tiong, “Optical characterization of Mo1−xWxS2 single crystals,”The 6th International Conference Microelectronics and Computer Science October 1-3, 2009,
Chisinau, Republic of Moldova.
9. Ching-Hwa Ho and Ming-Kai Chen, “Characterization of graded GaAs/GaInAs high electron mobility transistor structures by using photoreflectance and photoluminescence spectroscopy”,
51st TMS Electronic Materials Conference, EMC 2009, June 24-26, Penn. State Univ., Pennstater Conference Hall, USA. [計畫編號: NSC95-2221-E-259-031-MY3]
10. Ching-Hwa Ho, Sheng-Feng Lo, Ping-Chen Chi, Jian-Shen Li, Yi-Jia Chen, and Shui-Sheng Lin, “Optical Property of Near Band-Edge Transitions in Well-Aligned and Tilted ZnO Nanostructures”, OPT2008, Taipei, Taiwan. [計畫編號: NSC95-2221-E-259-031-MY3]
11. Ching-Hwa Ho, Ming-Kai Chen, Chi-Han Li, Ming-Cheng Tsai, Ming-Show Wong, “Characterization of Indirect and Direct Interband Transitions of Anatase TiO2 by Thermoreflectance Spectroscopy”, OPT 2008, Taipei, Taiwan. [ 計畫編號: NSC95-2221-E-259-031-MY3]
12. C. H. Ho, J. S. Li, C. C. Wu, Y. S. Huang, and K. K. Tiong, “Optical anisotropy of near band-edge transitions in zinc oxide nanostructures”, 16th International Conference on Solid Compounds of Transition Elements SCTE 2008, Dresden, Germany. [ 計畫編號:NSC95-2221-E-259-031-MY3]
13. H. J. Gau, J. L. Yu, C. C. Wu, Y. K. Kuo, and C. H. Ho, “Thermoelectric properties of In-incorporated Zn4Sb3 compounds”, 16th International Conference on Solid Compounds of Transition Elements SCTE 2008, Dresden, Germany.
14. C. H. Liang, Y. H. Chan, K. K. Tiong, Y. S. Huang, Y. M. Chen, D. O. Dumcenco, C. H. Ho, 2008, “Optical anisotropy of Au-Doped ReS2 Crystals”, 16th International Conference on Solid Compounds of Transition Elements SCTE 2008, Dresden, Germany.
15. C. W. Lee, S. T. Wang, C. C. Wu, C. H. Ho, “Band-edge characteristics of layered germanium dichalcogenides,” 2007 International Electron Devices and Materials Symposium (IEDMS), Hsinchu, Taiwan [計畫編號: NSC94-2221-E-259-035]
16. C. H. Ho, S. T. Wang, Y. S. Huang, and K. K. Tiong, “Structural and luminescent property of gallium chalcogenides GaSe1-xSx layer compounds”, The International Conference on Optical, Optoelectronic and Photonic Materials and Applications ICOOPMA2007, London, England.
17. C. H. Liang, C. H. Chen, K. K. Tiong, Y. S. Huang, D. Dumcenco, and C. H. Ho, “In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide”, The International Conference on Optical, Optoelectronic and Photonic Materials and Applications ICOOPMA2007, London, England.
18. M. C. Tsai, Y. J. Chen, H. W. Jhou, J. H. Du, C. H. Ho, “Optical anisotropy of ZnO nanocrystals on sapphire by thermoreflectance spectroscopy,” 2007 光電科技研討會, Taichung, Taiwan [計畫編號: NSC95-2221-E-259-031-MY3]
19. J. S. Li, J. H. Li, Y. S. Lin, C. H. Ho, “Thermoreflectance characterization of interband transitions of In0.34Al0.66As0.85Sb0.15 expitaxy on InP,” 2007 光電科技研討會, Taichung, Taiwan [計畫編號: NSC95-2221-E-259-031-MY3]
20. H.W. Jhou, Y. H. Liang, Y. J. Chen, and C. H. Ho, “Band-edge Transitions of a MOCVD-grown ZnO Film on Si by Thermoreflectance Spectroscopy”, 2006 光電科技研討會, Hsinchu, Taiwan [計畫編號: NSC94-2215-E-259-001]
21. S. T. Wang, M. H. Hsieh, C. H. Ho, and C. C. Wu, “Photoconductance and Photoresponse of Layer Compound Photodetectors in UV-Visible Region”, 2006 光電科技研討會, Hsinchu, Taiwan [計畫編號: NSC94-2215-E-259-001]
22. S. T. Wang, M. H. Hsieh, and C. H. Ho, “Carrier Transport Properties of Nickel-doped FeS2 Single Crystals from Resistivity and Hall-Effect Measurements”, 2006 International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan [ 計畫編號: NSC94-2215-E-259-008]
23. C. H. Ho, M. H. Hsieh, C. C. Wu, Y. S. Huang, K. K. Tiong, 2006, “Dichroic optical and electrical properties of rhenium dichalcogenides layer compounds”, 15th International Conference on Solid Compounds of Transition Elements SCTE 2006, Krakow, Poland.
24. Y. H. Liang, K. W. Huang and C. H. Ho, “Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices”, 2005 光電科技研討會, Tainan, Taiwan [計畫編號: NSC93-2215-E-259-002]
25. C. H. Li, K. W. Huang and C. H. Ho, “Visible luminescence and structural property of GaSe1-xSx (0≤x≤1) series layered crystals”, 2005 光電科技研討會, Tainan, Taiwan [計畫編號:NSC93-2215-E-259-002]
26. M. H. Hsieh, S. L. Lin, C. H. Ho and C. C. Wu, “Thermoreflectance study of the electronic structure of Ge(Se1-xSx)2”, 2005 光電科技研討會, Tainan, Taiwan [ 計畫編號:NSC93-2215-E-259-002]
27. C. H. Ho and K. W. Huang, “Modulation spectroscopic (MS) measurements of semiconductors by using a photoluminescence (PL) spectroscopic system,” 3rd International conference of materials for advanced technologies ICMAT 2005, Suntec city, Singapore. [計畫編號:
NSC93-2215-E-259-002]
28. 葉俊清, 陳逸安, 李卓憲, 周黃蔚, 何清華 “光電晶體(Photo-transistor)於半導體材料調制光譜量測之應用”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C. [計畫編號: NSC93-2815-C-259 -012 –E (大專生計畫)]
29. M. Y. Lin, C. E. Huang, C. H. Ho﹐C. C. Wu, “Preparation and characterization of Ni incorporated FeS2 single crystals”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C. [計畫編號:NSC92-2215-E-259-002]
30. S. L. Lin, C. H. Ho, C. C. Wu, Z. H. Cheng, “Crystal structure and electronic structure of GaSe1-xSx series layered solids”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C. [計畫編號:NSC92-2215-E-259-002]
31. K. W. Huang, H. W. Lee, C. H. Ho and C. C. Wu, “Polarization sensitive behavior of the band-edge transitions in ReS2 and ReSe2 layered semiconductors”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C. [計畫編號: NSC92-2215-E-259-002]
32. K. W. Huang, H. W. Lee and C. H. Ho, “Practical thermoreflectance design for optical characterization of layer semiconductors”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C. [計畫編號: NSC92-2215-E-259-002]
33. 余敏華, 李宏文, 周琬蓉, 何清華, 吳慶成, 2004, “As2(Se1-xSx)3非晶質化合物之光學特性探討”, 2004 光電科技研討會, Jhongli, Taiwan R.O.C.
34. 吳建誼, 鄭照煌, 周琬蓉, 何清華, 吳慶成, 2004, “利用垂直式Bridgman法成長硒硫化鍺晶體及其特性探討”, 2004 年材料年會, Hsinchu, Taiwan R.O.C.
35. H. W. Lee, D, E, Tseng, G. G. Wang, and C. H. Ho, 2003, “High-resolution and easy-implemented linear CCD spectral measured system used for optical characterization of optoelectronic materials and devices”, 2003 光電科技研討會, Taipei, Taiwan R.O.C. [計畫編號: NSC91-2215-E-259-004]
36. Z. H. Cheng, C. H. Ho, C. C. Wu, W. T. Shen, “Band-Edge Transitions in III-VI GaSe1-xSx Series Layered Semiconductors”, 2003 光電科技研討會, Taipei, Taiwan R.O.C. [計畫編號: NSC91-2215-E-259-004]
37. S. Y. Hu, M. C. Cheng, S. C. Lin, K. K. Tiong, P. C. Yen, Y. S. Huang, C. H. Ho and P. C. Liao, “Anisotropic piezoreflectance study of the band-edge excitons of W-doped ReSe2 single crystals”, 2003, 電子材料暨元件研討會EDMS, Keelung, Taiwan R.O.C.
38. C. H. Ho and C. E. Huang, 2003, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide”, 14th International Conference on Solid Compounds of Transition Elements, Linz, Austria.
39. S. Y. Hu, S. C. Lin, K. K. Tiong, P. C. Yen, Y. S. Huang, C. H. Ho, and P. C. Liao, 2003, “Growth and Characterization of Tungsten- and Molybdenum- doped ReSe2 Single Crystals”, 14th International Conference on Solid Compounds of Transition Elements, Linz, Austria.
40. C. H. Ho, C. E. Huang, Z. H. Cheng, H. W. Lee, Y. S. Huang, and K. K. Tiong, 2003, “Growth and Characterization of p-type Iron Pyrite Single Crystals”, 中華民國物理年會, Hualien,Taiwan R.O.C. [計畫編號: NSC91-2215-E-259-004]
41. C. H. Hsieh, Y. S. Huang, and C. H. Ho, 2003, “Temperature dependence of the band-edge transitions of ZnCdBeSe”, 中華民國物理年會, Hualien, Taiwan R.O.C. [計畫編號: NSC91-2215-E-259-004]
42. Ching-Hwa Ho, 2002, “Practical Instrumentation Design for Measuring The Radiation Patterns and Luminescent Spectra of Optoelectronic Devices” 2002 光電科技研討會, Taipei, Taiwan R.O.C. [計畫編號:NSC91-2215-E-259-004]
43. Ching-Hwa Ho and Ying-Sheng Huang, 2002, “Characterization of rhenium disulphide layered compound by using polarized-photoreflectance (PPR) spectroscopy” 2002 光電科技研討會, Taipei, Taiwan R.O.C. [計畫編號:NSC91-2215-E-259-004]
44. Ching-Hwa Ho, 2002, “Characterization of semiconductor materials by using double modulation spectroscopy” 2002 年材料年會, Taipei, Taiwan R.O.C. [ 計畫編號:NSC91-2215-E-259-004]
45. C. H. Ho, P. C. Yen, Y. S. Huang, and K. K. Tiong, 2002, “Polarization dependent electrolyte-electroreflectance characterization of the electronic structure of ReX2 (X=S, Se) layer crystals”, 中華民國物理年會, Taichung, Taiwan R.O.C. [ 計畫編號:NSC90-2215-E-149-002]
46. Ching-Hwa Ho, Chang-Hsun Hsieh, and Ying-Sheng Huang, 2001, “Novel Electronic Design for Double Modulation Spectroscopy of Semiconductor and Semiconductor Microstructures”, OPT2001 光電科技研討會, Kaoshung, Taiwan R.O.C. [計畫編號:NSC90-2215-E-149-002]
47. Y. J. Chen, J. S. Liang, Y. S. Huang, C. H. Ho, and K. K. Tiong, 2001, “Characterization of a pseudomorphic AlGaAs/InGaAs/GaAs High-Electron-Mobility-Transistor Structures Using Double-Modulation Photoreflectance”, 中華民國物理年會, Taipei, Taiwan R.O.C.
48. C. J. Lin, Y. S. Huang, N. Y. Li, H. M. Chen, C. H. Ho, and K. K. Tiong, 2001, “Characterization of GaInP/GaAs Heterojunction-Bipolar-Transistor Structures Using Photoreflectance and Contactless Electroreflectance”, 中華民國物理年會, Taipei, Taiwan R.O.C.
49. M. J. Chen, B. J. Yan, Y. S. Huang, C. H. Ho, and K.K. Tiong, 2001, “Growth and Characterization of W- and Mo-doped ReS2 Single Crystals”, 中華民國物理年會, Taipei, Taiwan R.O.C.
50. C. H. Ho, Y. S. Huang and K. K. Tiong, 2000, “In-plane Anisotropy of The Optical and Electrical Properties of ReS2 and ReSe2 Layered Crystals”, 13th International Conference on Solid Compounds of Transition Elements, Stresa, Italy.
51. K. K. Tiong, Y. S. Huang and C. H. Ho, 2000, “Electrical and Optical Anisotropic Properties of Rhenium-doped Molybdenum Disulphide”, 13th International Conference on Solid Compounds of Transition Elements, Stresa, Italy.
52. W. C. Yeh, S. Chen,Y. S. Huang, C. H. Ho and K. K. Tiong, 1999, “Temperature dependent polarized-piezoreflectance study of GaInP, 1999 臺灣光電科技研討會
53. C. H. Ho, P. C. Liao, Y. S. Huang, and K. K. Tiong, 1997, “Temperature Dependence of The Band-edge Excitons of ReS2 and ReSe2”, 1st Annual Meeting on Semiconductor Physics, Taipei, Taiwan R.O.C.
54. Y. S. Huang, C. H. Ho, P. C. Liao, and K. K. Tiong, 1997, “Temperature Dependent Study of The Band Edge Excitons of ReS2 and ReSe2”, 12th International Conference on Solid Compounds of Transition Elements, Saint-Malo, France.
55. M. Y. Tsay, C. H. Ho, and Y. S. Huang, 1991, “Growth and Characterization of FeS2 Single Crystals”, EDMS, Taipei, Taiwan R.O.C.


國科會計畫

100/8-101/7 半導體光電材料與元件之光特性量測研究(3/3) (NSC98-2221-E-011-151-MY3)
99/8-100/7 半導體光電材料與元件之光特性量測研究(2/3) (NSC98-2221-E-011-151-MY3)
99/8-100/7 硫屬單晶半導體之固態及光電性質研究(3/3) (NSC97-2221-E-011-164-MY3)
98/8-99/7 半導體光電材料與元件之光特性量測研究(1/3) (NSC98-2221-E-011-151-MY3)
98/8-99/7 硫屬單晶半導體之固態及光電性質研究(2/3) (NSC97-2221-E-011-164-MY3)
97/8-98/7 以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(3/3) (NSC95-2221-E-259-031-MY3)
97/8-98/7 硫屬單晶半導體之固態及光電性質研究(1/3) (NSC97-2221-E-011-164-MY3)
96/8-97/7 以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(2/3) (NSC95-2221-E-259-031-MY3)
95/8-96/7 以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(1/3) (NSC95-2221-E-259-031-MY3)
95/8-96/7 六方片狀結構半導體之載子傳輸與光學性質研究(2/2) (NSC95-2221-E-259-035)
94/8-95/7 半導體材料與元件光電特性之量測及研究(2/2) (NSC94-2215-E-259-001)
94/8-95/7 六方片狀結構半導體之載子傳輸與光學性質研究(1/2) (NSC94-2215-E-259-008)
93/8-94/7 半導體材料與元件光電特性之量測及研究(1/2) (NSC93-2215-E-259-002)
92/8-93/7 半導體材料與元件光電特性之量測及研究(I) (NSC92-2215-E-259-002)
91/8-92/7 半導體光學非破壞性檢測系統之改善構建與應用 (NSC91-2215-E-259-004)
90/8-91/7 光電半導體元件光學特性之量測與研究(NSC90-2215-E-149-002)
89/8-90/7 光電半導體之發光與檢光特性之量測與研究(NSC89-2626-E-149-003)


其他相關論著

1. 國科會計畫結案報告 2000, “過渡性金屬硫屬化合物薄膜與單晶之成長與特性研究”, 編號NSC89-2112-M-019-002 (共同主持人)。
2. 國科會計畫結案報告 2001, “光電半導體之發光與檢光特性之量測與研究”,編號NSC89-2626-E-149-003 (主持人)。
3. 國科會計畫結案報告 2001, “過渡性金屬硫屬化合物之非等向性光學特性研究(1/2)”, 編號NSC89-2112-M-019-006 (共同主持人)。
4. 國科會計畫結案報告2001, “利用調制光譜與表面光電壓量測技術研究半導體元件構造與微細結構之光學特性(1/2)”,編號NSC89-2215-E-011-012 (共同主持人)。
5. 國科會計畫結案報告 2002, “光電半導體元件光學特性之量測與研究”,編號NSC90-2215-E-149-002 (主持人)。
6. 國科會計畫結案報告2002, “過渡性金屬硫屬化合物之非等向性光學特性研究(2/2)”,編號NSC90-2112-M-019-001 (共同主持人)。
7. 國科會計畫結案報告2002, “利用調制光譜與表面光電壓量測技術研究半導體元件構造與微細結構之光學特性(2/2)”,編號NSC90-2215-E-011-006 (共同主持人)。
8. 國科會計畫結案報告2003, “雜質對層狀過渡性金屬硫屬化合物單晶之導電性及光電特性影響研究(1/2)”, 編號NSC91-2112-M-019-003 (共同主持人)。
9. 國科會計畫結案報告2003, “半導體光學非破壞性檢測系統之改善構建與應用”,編號NSC91-2215-E-259-004 (主持人)。
10. 國科會計畫結案報告2004, “半導體材料與元件光電特性之量測及研究(I)”,編號NSC92-2215-E-259-002 (主持人)。
11. 國科會計畫結案報告2005, “半導體材料與元件光電特性之量測及研究(1/2)”,編號NSC93-2215-E-259-002 (主持人)。
12. 國科會計畫結案報告2006, “六方片狀結構半導體之載子傳輸與光學性質研究(1/2)”,編號NSC94-2215-E-259-008 (主持人)。表C302 共 12 頁 第 11 頁
13. 國科會計畫結案報告2006, “半導體材料與元件光電特性之量測及研究(2/2)”,編號NSC94-2215-E-259-001 (主持人)。
14. 國科會計畫期中報告2007, “以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(1/3)” NSC95-2221-E-259-031-MY3 (主持人)。
15. 國科會計畫結案報告2007, “六方片狀結構半導體之載子傳輸與光學性質研究(2/2)”NSC95-2221-E-259-035 (主持人)。
16. 國科會計畫期中報告2008, “以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(2/3)” NSC95-2221-E-259-031-MY3 (主持人)。
17. 國科會計畫結案報告2009, “以光學非破壞性量測技術來研究光電半導體及其元件結構之光學特性(3/3)” NSC95-2221-E-259-031-MY3 (主持人)。
18. 國科會計畫期中報告2009, “ 硫屬單晶半導體之固態及光電性質研究(1/3)”NSC97-2221-E-011-164-MY3 (主持人)。
19. 國科會計畫期中報告2010, “ 硫屬單晶半導體之固態及光電性質研究(2/3)”NSC97-2221-E-011-164-MY3 (主持人)。
20. 國科會計畫期中報告2010, “半導體光電材料與元件之光特性量測研究(1/3)”NSC98-2221-E-011-151-MY3 (主持人)。


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